0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity on both devices and low-noise amplifiers (LNA) using 0.1 mum n
⁺
-InAs-AlSb-InAs HEMTs on 3-inch GaAs substrates. In addition, the LNAs also demonstrate excellent RF performance while operating at ultralow power (~1 mW). This accomplishment is crucial for phased-array applications requiring ultralow power dissipation.