Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance

We report a novel Si/Si
_1-x
Ge
_x
channel with improved noise, current drivability, and reliability using a buried Si
_0.99
C
_0.01
which can induce higher channel strain for the same Ge concentration. High-k dielectrics on Si/Si
_1-x
Ge
_x
. with buried Si
_0.99
C
_0.01
show lower charge trapping, better leakage current distribution and less ftathand voltage shift. Si/Si
_1-x
Ge
_x
. channel p-MOSFET with the buried Si
_0.99
C
_0.01
shows drive current improvement of up to 20% and better noise immunity.