Investigation of Excitonic Effects in Polar InGaN/GaN Quantum Heterostructures for Enhanced Quantum Electroabsorption in Blue

This work investigates the strong quantum electroabsorption behavior in polar InGaN/GaN quantum heterostructures by carefully designing and controlling the quantum structure parameters and thus obtaining strong excitonic effects for the end goal of making a high-performance quantum electroabsorption modulator in blue. This is due to the reversed quantum confined Stark effect with the realization of 4 nm/4 nm InGaN/GaN structure.