Designing of High Efficiency Power Amplifier Based on Physical Model of SiC MESFET in TCAD

The pulse input Class C power amplifier response of an enhanced version of a previously fabricated and tested SiC MESFET 11 are studied using a new technique to its physical model in TCAD. The device is simulated at 5% duty cycle pulse for Gain (dB), Power density (W/mm), power loss and power added efficiency (PAE %) at 500 MHz and 1 GHz. The results are then correlated to the device features in DC and RF I-V characteristics. A maximum PAE of 80% at 500 MHz with 36.9 dB power gain and power density of 1.07 W/mm is achieved.