Quantum Capacitance Measurement for SWNT FET with Thin ALD High-k Dielectric

The thin conformal HfO
₂
dielectric, which could provide very large geometric top-gate-capacitance C
_gg
comparable to SWNT quantum capacitance C
_q
, and the capacitance measurement technique developed by us, which could reduce the background capacitance down to C
₀
~30aF, are two key promising factors for us to study the quantum capacitance of the SWNT FET. We successfully got the pronounced oscillating peaks in the C
_q
vs. top-gate V
_TG
, which will be very usefully for us to better characterize the performance of the SWNT FETs and to further study the low-dimensional electronic structure.