Hybrid ALD-SiN/Si-nanocrystals/ALD-SiN FinFET device with large P/E window for MLC NAND Flash memory application

To improve P/E window of real NVM device, we have fabricated hybrid nanocrystal FinFET structures using state-of-the-art technologies such as TaN metal gate, atomic layer deposition (ALD) method, Al
₂
O
₃
blocking dielectrics, post-deposition anneal (PDA) and plasma doping (PLAD) in order to provide the product-wise solutions for the next generation NAND Flash memory. We present results of P/E characteristics of our device with above-mentioned technology and propose the process integration.