Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs

In this paper, we demonstrate one possible integration scheme to achieve dual work function metal gates on high-k dielectrics by utilizing bilayer metal electrodes and a selective metal wet etch process. We achieve a ~0.85 eV difference in effective gate work functions and well-behaved transistor characteristics by using Al/W and Pt/W bilayer metal gates on Hf02 dielectrics.