Monte Carlo Simulation of Nonstationary Electron Transport in GaAs/AlAs Quantum Wire

The results of Monte Carlo simulation of electron drift velocity response on the application of longitudinal electric field in transistor structure based on GaAs/AIAs quantum wire are presented. All the dominant electron scattering mechanisms in the structure considered have been taken into account, as wellas collisional broadening. The influence of transverse electric field on electron drift velocity is investigated.