Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

We demonstrate Si ion-implanted GaN/AlGaN/GaN high-electron mobility transistors with extremely low gate leakage current and low source resistance without any recess etching process. The source/drain (S/D) regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into S/D regions with an energy of 80 keV, the performances were significantly improved. On-resistance decreased from 26.2 to 4.3 Omega
^ldr
mm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm.