Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices

In this paper, we have explored the random dopant effects on the characteristics of the 16nm single- and multiple-gate SOI MOSFETs using a full-scale 3D atomistic simulation technique. For device with the same Vth, the multiple-gate devices not only provide uniform potential within device's channel, but also alter conducting path for more stable current flow. It has been estimated that the Vth's flucutaion of double-, triple-, and surrounding-gate SOI MOSFETs are 2.2, 3.3, and 4 times smaller than planar one, respectively. A preliminary insight into the intrinsic fluctuation and its mechanism of immunity in multiple-gate SOI devices has been drawn.