High Performance NMOS Transistors for 45nm SOI Technologies

We demonstrate NMOS performance enhancements of up to ~18% for applications in a 45 nm SOI technology. The performance boost was achieved using high tensile-stressed UV film in conjunction with stress memorization techniques (SMT). For the first time we demonstrate that using a UV-cured tensile film allows a 6% performance boost on the SOI NMOS, achieving a drive current of ~1170μA/μm (1250, non-self-heated) at I
_off
= 100nA/μm, V
_dd
= 1V.