Integration of a 5.5V BVCEO SiGe HBT within a 200 GHz SiGe BiCMOS process flow

A novel BiCMOS integration scheme is described whereby high-performance, high breakdown-voltage SiGe HBTs can be integrated alongside ultra high performance, 200 GHz SiGe HBTs. The integration scheme is summarized and proof-of-concept data is shown to indicate the validity of the proposed scheme. It is shown that a 5.5 V BV
_CEO
HBT with peak F
_T
of 45 GHz can be manufactured on the same wafer as a 200 GHz HBT with zero or one additional masking layers.