Applications of the Thermal Step Method to the Characterization of Electric Charge in MOS Components

This work is concerned with the development of a non destructive method for measuring electric charge in metal-oxide-semiconductor (MOS) components and devices. The aim is to obtain further information on microelectronics and power electronics components and, using the gate oxide state, to assess semiconductors health. Results obtained on MOS samples with oxide thicknesses of 2 nm, 50 nm and 120 nm, and on power electronics modules are presented.