The Dual GCT - A New High-Power Device Using Optimized GCT Technology

The performance of high-power inverters is determined strongly by the characteristics of the semiconductor devices. The design of suitable devices is always a compromise between on-state losses and switching losses. In this paper, a new device - the Dual GCT - is proposed that combines the advantages of differently optimized gate commutated thyristors (GCTs) and realizes low conduction and low switching losses in a single semiconductor device. The concept is introduced first, before the analytical design is presented. Next, FEM simulations are employed to extent the investigation to devices that are not yet available. Measurements of a hybrid Dual GCT are added to verify the advantages of the concept. Finally, the results are discussed.