Performance analysis of a bipolar mode FET (BMFET) with normally off characteristics

The fabrication and characterization of a family of power bipolar-mode junction FETs (BMFETs) are reported. Blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm/sup 2/) have been obtained. The experimental results are used to get an insight into the physics of BMFET operation and to extract the basic design criteria for these structures. The performance of the BMFET is compared with that of the bipolar transistor, showing it to be superior.<
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