High-Voltage, High-Frequency SiC Power MOSFETs Model Validation*

Circuit simulator model validation procedures and results are presented for SiC power MOSFETs. The characteristics discussed include on-state conduction, resistive load switching, inductive load switching, and high voltage depletion capacitance. The validation procedures are performed using a script written in the AIM language that is incorporated in the Saber®
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circuit simulator. The script uses the model parameter sets from the IGBT Model Parameter ExtrACTion (IMPACT) tools to perform simulations and then compares the simulated results with measured characteristics. Example validation results are presented for recently developed 5 A, 10 kV SiC power MOSFETs demonstrating for the first time the model performance at the full application switching voltage (5 kV for the 10 kV devices).