Gate-all-around Twin Silicon nanowire SONOS Memory

We have developed gate-all-around (GAA) SONOS with ultra thin twin silicon nanowires for the first time. By using channel hot electron injection (CHEI) and hot hole injection (HHI) mechanisms, program speed of 1 mus at V
_d
= 2 V, V
_g
= 6 V and erase speed of 1 ms at V
_d
= 4.5 V, V
_g
= -6 V are achieved with 2~3 nm nanowire and 30 nm gate. Nanowire size below 10 nm dependencies on V
_th
shift (DeltaV
_th
) and the program/erase (P/E) characteristics are investigated. As nanowire diameter (d
_nw
) decreases, faster program speed and larger DeltaV
_th
are observed.