High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory

Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal SSTFT process , periphery only Co salicidation, and W shunt wordline scheme.