0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node

For the fist time, low supply voltage SRAM operation with stress-enhanced dopant segregated Schottky (DSS) source/drain transistors is demonstrated. At constant SRAM cell current of 40 μA, we achieve two orders of magnitude lower bit-line leakage than conventional technologies at V
_dd
=0.7 V, while in case of constant bit-line leakage of 10 nA, supply voltage is successfully reduced down by 0.1 V. DSS technology is promising for low voltage SRAM operation for 32 nm node and beyond.