Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique

Performance of advanced hybrid-gate CMIS (poly-Si/HfSiON nMIS and poly-Si/TiN/HfSiON pMIS) is demonstrated. Vth of pMIS is controlled by fluorine implantation and by PVD/CVD-stacked TiN, which has higher WF than conventional single-CVD TiN. This combination enables sufficient Vth-control without degradation of device characteristics by excessive fluorine. Performance boosters such as strain enhancement techniques and laser annealing are easily and successfully introduced, and high current drivability is obtained. This advanced hybrid structure is promising for CMIS platforms of 45-nm node and beyond.