A Programmable Test System for Transient Annealing Characterization of Irradiated MOSFETs

A current programmable, computer controlled Transient Annealing Test System (TATS) for making complete MOSFET I-V measurements is described. The system forces source currents from 100 pA to 10 mA and measure corresponding gate voltages starting at times as early as 100 μs after a radiation pulse. Features of the system include multiple independent test channels, temperature control over the full military range and completely programmable test/bias sequences. Applications of the system include: a) transient failure mechanism studies, b) in-source testing, and c) high throughput wafer level hardness assurance testing.