Simulation of Heavy Charged Particle Tracks Using Focused Laser Beams

A laboratory system utilizing a Q-switched Nd-doped YAG laser is used to simulate the ionization track produced as energetic heavy ions traverse a semiconductor device (resulting in single-event upset effects). Details of the optical design for producing the precisely focused spot and the requirements for fast pulses are described. The advantages and disadvantages of the use of this laboratory simulation are discussed. Laser tests on PIN diodes, p-n junctions, bipolar memories, and power MOSFETs are described and compared to high energy particle tests results.