1 MeV Electron Radiation Effects in SnO2 - SiO2 - Silicon Solar Cells

High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 × 1015 e-/cm2. These stable terrestrial cells had a critical fluence of 1 × 1013 e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 Ω-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 × 1016 e-/cm2. SIS cells on p-type Si should show improved response.