Radiation-Induced Laser Action in CdSe

Laser emission of CdSe excited by Ga(AsP) laser diode has been studied near liquid helium temperature both before and after irradiation with fast neutrons. Irradiation introduces new laser peaks at ~6895Å, ~690Å, and ~6924Å, which are situated at longer wavelengths as compared to the peaks observed before irradiation. The laser peak at ~6905Å can be associated with the strong spontaneous emission that is observed at the same wavelength after irradiation. These results are interpreted in terms of the recombination of excitons bound to the defects introduced by irradiation.