Distributed Modeling of Layout Parasitics in Large-Area High-Speed Silicon Power Devices

This paper reports a technique for generating a lumped-element distributed model for silicon power devices that takes into account the effect of layout parasitics. The proposed methodology exploits the high-frequency modeling approach of microstrips and striplines to describe both the passive parts of the device and elementary transistor cells. A semi-empirical model for the elementary transistor cells of the power device is also proposed. Parameter extraction is described and validated by direct comparison with device simulations of an actual device. The proposed modeling approach is employed to investigate the internal current distribution of a high-voltage silicon power MOSFET supplied by STMicroelectronics during the turnoff transient. The tradeoff that must be accomplished between accuracy and complexity is discussed. The effect of increased switching frequency on the device current distribution is also reported explaining how it may lead to performance degradation and device failure.