Alumina MEMS Platform for Impulse Semiconductor and IR Optic Gas Sensors

In the presentation, we discuss the application of a novel MEMS technology based on a fabrication of thin alumina film (TAF). The membrane is fabricated by the electrolyte spark oxidation of aluminum. The membrane consists of nano-crystalline γ-aluminum oxide and has a thickness of 10-30 microns. It was shown that this membrane chip can be used for the fabrication of gas sensors (semiconductor, thermocatalytic, and optic) operating in impulse regime. The thermal response time of the heater is of about 80 ms, the chip remains working after 7 millions on-off cycles at 450°C.