lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control

The switching versus forward conduction performance tradeoffs of 10 kV 4H-SiC PiN diodes are optimized using emitter injection control. Experimental results show superior switching performance with up to a 40% reduction in critical recovery parameters such as Q
_rr
and J
_RP
, while simulations indicate a better performance tradeoff than conventional PiN diodes in the presence of sufficiently long drift layer lifetime.