CMOS Dual-Work-Function Engineering by Using Implanted Ni-FUSI

For the first time, a simple CMOS fully silicided (FUSI) process achieving n/pMOS band-edge work function was demonstrated, which is fully compatible with conventional CMOS process. Dual-work-function CMOS FUSI, with a wide range of 800 mV, was achieved by implantation of Yb into the poly of the nMOS gate (4.1-eV work function) and Ga into the poly of the pMOS gate (4.9-eV work function), respectively. The placement of the tuning elements at the metal/dielectric interface was engineered with the thermal budget, as well as the implant dose and species.