Measurement of Electric Characteristics of Lateral Magnetotransistor

At absence of a magnetic field measurements of electric characteristics of samples p-n-p lateral dual-collector bipolar magnetosensitivity transistors in diffusion well are lead, which were made on the basis of SMC "technological center". Measurements were spent at inclusion of the transistor under scheme CE (common emitter) at the torn off contact to a substrate and at association of contacts of a substrate and base. Communication between the attitude of a full current of collectors to the general current of base and a substrate with factor of increasing of a base current is shown.