Deep Traps Induced by 700 keV Protons in CdTe and CdZnTe Detectors

We have studied the effects of 700 keV protons at increasing fluences (up to 2times10
¹²
p/cm
²
) on CdTe:Cl and Cd
_0.9
Zn
_0.1
Te detectors. The charge transport properties of the detectors have been studied by mobility-lifetime (mutau) product measurements, gamma spectroscopy and photo induced current transient spectroscopy (PICTS) analyses. The correlation of the macroscopic transport behaviour with the information on the microscopic defective states allowed for the identification of the role played by the dominant traps: levels Z and H1 resulted related to electron trapping effects, while levels K and X showed a hole trapping character.