Determination of Lateral Charge Distributions of Split-gate SONOS Memories Using Experimental Devices with Nanometer-size Nitride Piece

Lateral charge distribution in nitride of split-gate type Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories has been determined by well-controlled experimental devices in which nanometer-size nitride piece was located at various positions for monitoring trapped charge. We found that electron distribution is created by two different hot-electron-injection mechanisms. Based on this new finding, the way to improve the matching of electron and hole distributions is investigated.