Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Si-Sb-Te (SST) system materials were investigated for non-volatile phase change memory application. By contrast to the conventional GST films, the SST films exhibit stronger thermal stability and smaller RESET current, which were resulted from the self-confine and self-heat mechanisms by the amorphous Si-rich regions surrounding the phase change crystalline in SST. It shows a good promise for non-volatile memory applications.