Processing and Defect Control in Advanced Ge Technologies

To achieve the required drive performance for sub 32 nm technology nodes there is strong interest in exploring the use of Ge-based technologies. This paper reviews some important processing aspects from a defect control viewpoint. Attention is given to crystal growth, shallow junction formation and germanidation techniques, respectively. The main focus is on defect related aspects. The last section deals with the device performance and the impact of processing on device leakage current and low frequency noise behavior.