Molecular Implants for Advanced Devices

The use of implants of the B
₁₈
H
₂₂
molecule for advanced IC fabrication are discussed. B
₁₈
H
₂₂
can be implanted at energies up to 4 keV B equivalent at beam currents much higher than those achievable with conventional implant species. B
₁₈
H
₂₂
implants have been used for polysilicon and source/drain extension doping and have shown process equivalence to conventional implants. Using B
₁₈
H
₂₂
may require minor modifications to anneal and resist removal steps to minimize junction leakage and dopant loss.