Arsenic Diffusion in strained Si/relaxed Si1-xGex and its electrical characteristics

In this work, the authors investigated arsenic diffusion in s-Si/Si
_1-x
Ge
_x
with the use of thermal diffusion method in order to avoid the crystal damage due to ion-implantation and tried to clarify the Ge chemical effect and strain effect on dopant diffusion. We also studied electrical characteristics in As-diffused s-Si/Si
_1-x
Ge
_x
heterostructures.