A New Fast and Accurate Steady State Master Equation Model for Capacitively-Coupled Single-Electron Transistor (SET)

In this paper we present a new accurate fast model based on a reduced master equation (ME) method for simulating the I-V characteristics of a single-electron transistor (SET) at the steady-state mode. Full details for the proposed model are presented, then a comparison is made between SET simulation using our model and that generated by the quantum transport (QT) research group at Delft University of Technology, which is based on full master equation method, in which we have to consider all possible charge states in the tunnel junction. The comparison shows that results of our fast model are exactly matching QT's results at low bias conditions. Our model has the advantage of being fast and less numerical intensive