ESD Evaluation of the Emerging MuGFET Technology

Electrostatic discharge (ESD) characteristics of fully depleted FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET Technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with - characteristics beneficial for ESD protection.