Design of an RF BJT-Low Noise Amplifier at 1GHz

A fully-integrated RF Low Noise Amplifier (LNA) suitable for low-voltage applications is proposed using bipolar junction transistors (BJT) cascaded stages. The proposed design aims to provide gain with low bias current consequently lower power dissipation and lower Noise Figure (NF). The circuit is designed and simulated using MultiSim9 from Electronics Workbench DesignSuite Edition 9. The proposed amplifier exhibits 3.296dB small-signal gain, reverse isolation of -6.68dB and 0.359dB noise figure at 1GHz.