A Low-Power 5GHz Transceiver in 0.13μm CMOS for OFDM Applications with Sub-mm2 Area

A 5 GHz direct conversion transceiver is fabricated in a 0.13μm CMOS process for WLAN 802.11a applications. The transmitter achieves -56 dBc LO leakage, -36 dBc sideband rejection, -43 dBc 3
^rd
harmonic suppression at 5.4GHz, and an EVM of 3.4% at 5.1GHz with 60mW power consumption. The receiver achieves 3.3 dB NF, 27 dB conversion gain, -12 dBm IIP3, and a measured 1/f noise corner of 110kHz with 36mW power consumption from a 1.2V supply voltage. The active area was 0.9 mm
²
.