CMOS Radio with an Integrated 26dBm Power Amplifier for a Complete System-on-Chip Cordless Phone

A fully integrated transceiver in a 0.13μm CMOS technology including on-chip Power Amplifier (PA) for digital cordless telephone standards is presented. The PA exhibits an output power of P
_OUT
= 26dBm. The implemented frequency synthesizer shows robustness against PA coupling, excellent phase noise performance and fast settling time. The fully integrated receiver deploys a low intermediate frequency (IF) architecture with a very low noise, low current consumption front-end and a complex band pass filter for channel selection. The receiver is measured to achieve a sensitivity level of P
_0.1%
= -96dBm. The transceiver uses I
_TX
= 35mA in transmit mode and I
_RX
= 25mA in receive mode from a regulated V
_TRX
= 1.5V supply. The PA shows a power added efficiency (PAE) of more than 30% at a V
_PA
= 2.5V direct-connect-to-battery supply. The transceiver is developed as a part of a complete System-on-Chip (SoC) cordless phone.