Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes

High quality In
_x
Ga
_1-x
As platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.