Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

In this work, a detailed study on the surface recombination in InP/InAlAs/GaAsSb/InP DHBTs was carried out. The experimental data clearly reveal that, by using an InP/InAlAs composite emitter to form a type-I E-B heterojunctuion, the surface recombination at low J
_C
is suppressed with a reduction of K
_{B_surf}
by a factor more than 50. The temperature-dependent study of K
_{B_surf}
suggests that, at low J
_C
level, the contribution of surface recombination velocity-limited mechanism cannot be ignored.