Optimization of RF performance of MIM Damascene Capacitors in Backend of Line

High frequency characterizations and simulations of advanced metal-insulator-metal (MIM) capacitors in Cu/low-k backend interconnection process are presented. First, we focus on the impact of silicon substrate and design of MIM capacitors on high frequency performance. Numerical results obtained by a 3D electromagnetic modeling are validated by comparison to experimental results. Second, we show the possibility to increase HF electrical performance of MIM capacitor with optimized design and integration of new medium or high-k materials.