A Silicon RFCMOS SOI Technology for Integrated Cellular/WLAN RF TX Modules

We describe the development of a novel RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1kΩ-cm) silicon substrates. This technology provides a platform for cost-effective monolithic integration of several RF RF TX functions for cellular and WLAN RF system applications. The technology includes the integration of an RF power LDMOS transistor capable of nearly comparable linear and saturated RF power characteristics to GaAs solutions in the frequency range between 0.8GHz-2.4GHz. We present measured results of RF power devices in the cellular and WLAN bands, as well as characterization data of integrated antenna diversity switches, and integrated power management circuits.