Effect of Memory Element Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM

This work focuses on an experimental study of the effect of the thermal environment and the resistance area product (RA) of an magnetic tunnel junction (MTJ) on the MTJ reliability and minimum required heating current of CPP thermally written magnetic random access memory (MRAM). Proper device design should optimize cell thermal resistance and MTJ RA for both reliability and minimum power consumption.