Identification of Process Window Limiting Structures by Design-Based Defect Binning

A new methodology is presented for identifying misprinted structures during the qualification of a new photomask. It is based on defect inspection of a focus- and exposure-modulated wafer. Instead of the traditional approach which employs repeater analysis, the new technique bins the defect locations according to the design structures where they occur and assigns them a criticality factor. This method allows for efficient data reduction and prioritization of suspect sites, leading to identification of marginally-printed structures within the patterning process window.