Above Threshold pFET InjectionModeling intended for ProgrammingFloating-Gate Systems

We present a first-order model for pFET hotelectron injection that is consistent for subthreshold and above threshold current levels. Injection is a critical phenomena for high-precision programming of floating-gate devices, and accurate modeling fuels continued improvement of programming techniques. Previous work has shown good modeling for subthreshold operation; in this work we extend the modeling throughout the region, enabling improved programming algorithms for floating-gate switch elements, resistors, and highperformance circuit elements. We discuss the implementation of this model in CADENCE's version of SPICE.