25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation

A 25 V ESD NPN transistor is made high current capable by means of distributed emitter ballasting. The proposed segmentation of the emitter contact area along the width offers an efficient way to extend the homogeneous current regime without causing any significant increase of the holding voltage. At high current, a second snap-back is observed in the TLP current-voltage characteristics. Transient interferometric mapping analyses show that this voltage drop is due to current filamentation arising at a time decreasing with increasing current amplitude