Accelerated RF life Testing of Gan Hfets

This work reports the results of the first three temperature accelerated RF life test on millimeter-wave GaN heterostructure field effect transistors (HFETs) at 10 GHz. 2times100 mum transistors were stressed at 2 dB compression with a pre RF bias condition of I
_ds
= 100 mA/mm and V
_ds
= 25 V. The three channel temperatures used in study were 285 degC, 315 degC and 345 degC. An activation energy of 1.80 eV was extracted giving a MTTF at T
_ch
= 125 degC of 3.5times10
⁹
hours.