Measurement of Minority Carrier Lifetime in Hg1-xCdxTe Photodetector

The transient photo-generated excess minority carrier lifetime in Hg1-xCdxTe n+p junction photodetector are measured using improved photo-induced open-circuit voltage decay (OCVD) technique. The lifetimes we extracte from the decay curve of the photovoltage are from tens to hundreds ns. A comparison of the relationship between composition of Cd and minority carrier lifetime show the lifetimes become longer with the increasing of Cd composition.